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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
58,000 pcs
|
58000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current | |
| Collector Cutoff Current | |
| Collector-Emitter Voltage | |
| DC Current Gain (hFE) | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Supplier Device Package | |
| Transistor Type | |
| Transition Frequency | |
| Vce Saturation |
The BD243CG is an NPN bipolar junction transistor (BJT) manufactured by onsemi. It is engineered for both switching and amplifier applications, handling a maximum collector current of 6A and a collector-emitter voltage of up to 100V.
This transistor is suitable for high power, moderate frequency tasks, with a maximum power dissipation rating of 65W and a transition frequency of 3MHz. It features a Vce saturation of 1.5V at 1A/6A and a minimum DC current gain (hFE) of 15 at 3A/4V. The collector cutoff current is a maximum of 700µA.
Offered in a standard TO-220 through-hole package, the BD243CG facilitates easy mounting and efficient heat dissipation. Its operating junction temperature range is -65°C to 150°C. The component is RoHS3 compliant, ensuring environmental safety in its applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the BD243CG is 100V.
The maximum continuous collector current for the BD243CG is 6A.
The BD243CG has a maximum power dissipation rating of 65W.
The Vce saturation voltage is 1.5V at 1A collector current and 6A collector current.
The minimum DC current gain (hFE) is 15 at 3A collector current and 4V collector-emitter voltage.
The transition frequency for the BD243CG is 3MHz.
The operating junction temperature range is -65°C to 150°C.