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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUX28V from Siemens is a silicon NPN bipolar junction transistor (BJT) housed in a TO-3 package. This component is engineered for applications requiring significant power handling capabilities, with a maximum collector power dissipation of 80W and a maximum collector current of 7A.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 350V and a maximum emitter-base voltage (Veb) of 7V. The transistor offers a minimum forward current transfer ratio (hFE) of 300 and operates at a transition frequency (ft) of 1 MHz. Its maximum operating junction temperature is rated at 175°C.
The TO-3 package is suitable for through-hole mounting and is designed for robust thermal management in power applications. The BUX28V is a reliable choice for power switching and amplification circuits where high voltage and current capabilities are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the BUX28V is 350V.
The maximum collector current for the BUX28V is 7A.
The maximum power dissipation for the BUX28V is 80W.
The maximum operating temperature for the BUX28V is 175°C.
The BUX28V is supplied in a TO-3 package.
The minimum hFE for the BUX28V is 300.
