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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUV48 from Thomson-CSF is a multiepitaxial mesa NPN transistor designed for high voltage switching applications, particularly those directly connected to 220V and 380V mains. It is available in three package types: TO-3 metal case, TO-218 plastic package, and the fully isolated ISOWATT218 package.
Key electrical characteristics include a collector-emitter voltage (Vces) of up to 1000V and a continuous collector current (Ic) of 15A. The transistor also offers a high collector peak current capability of 30A (tp < 5ms) and non-repetitive peak current of 55A (tp < 20µs). Its switching characteristics include a turn-on time of 1µs and a fall time of 0.8µs under specified test conditions.
Thermal performance varies by package. The TO-3 package offers a total power dissipation of 175W at 25°C and a junction-to-case thermal resistance of 1°C/W. The TO-218 package has a power dissipation of 125W and the same thermal resistance, while the ISOWATT218 package has a power dissipation of 65W and a thermal resistance of 1.92°C/W. The maximum operating junction temperature is 200°C for the TO-3 package and 125°C for the TO-218 and ISOWATT218 packages.
This transistor is suitable for power supply circuits, inverters, and other applications requiring robust high-voltage switching. Its availability in different packages allows for flexibility in design and thermal management.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vces) for the BUX48A/BUV48A/BUV48AFI variants is 1000V, and for the BUX48/BUV48/BUV48FI variants, it is 850V.
The continuous collector current (Ic) rating for the BUV48 transistor is 15A.
The BUV48 transistor is available in TO-3 metal case, TO-218 plastic package, and ISOWATT218 fully isolated package.
The total power dissipation (P tot) for the BUV48 in a TO-3 package is 175W at 25°C.
The turn-on time is 1µs, storage time is 3µs, and fall time is 0.8µs under specified test conditions.