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4,139 pcs
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4139 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BUK7675-55A is a standard level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is designed and qualified for automotive critical applications, making it suitable for 12V and 24V loads.
Key electrical characteristics include a drain-source voltage (VDS) of 55V and a continuous drain current (ID) of up to 20.3A at 25°C. The on-state resistance (RDSon) is a maximum of 75mΩ at Tj = 25°C and VGS = 10V, with low conduction losses due to its low on-state resistance. The total power dissipation (Ptot) is rated at 62W at 25°C.
This MOSFET is suitable for standard level gate drive sources and can operate in thermally demanding environments due to its 175°C rating. Applications include automotive and general purpose power switching, motors, lamps, and solenoids.
The BUK7675-55A comes in a D2PAK (SOT404) plastic package designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 55V.
The maximum continuous drain current is 20.3A.
The maximum total power dissipation is 62W.
The typical on-state resistance is 64mΩ and the maximum is 75mΩ at 25°C.
The junction temperature range is -55°C to 175°C.
The BUK7675-55A is available in a D2PAK (SOT404) package for surface mounting.
The RoHS status is RoHS3 Compliant.