PMPB100XPEA
NXP Semiconductors
The PMPB100XPEA is a P-channel Trench MOSFET from NXP Semiconductors. It offers a 20V drain-source voltage and a typical on-state resistance of 100mΩ.
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370 pcs
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370 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUK456-100A from NXP Semiconductors is an N-channel enhancement mode field-effect power transistor packaged in a TO220AB plastic envelope. This device is suitable for various applications including Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC converters, and AC/DC converters.
Key electrical specifications include a maximum drain-source voltage of 100V and a continuous drain current of up to 34A at 25°C. The total power dissipation is rated at 150W. The transistor features a low drain-source on-state resistance, with a typical value of 0.057 Ohms for the BUK456-100A variant at 10V gate-source voltage and 15A drain current.
Thermal characteristics include a junction-to-mounting base thermal resistance of 1.0 K/W and a junction-to-ambient thermal resistance of 60 K/W. The maximum junction temperature is 175°C. The device is intended for general purpose switching applications where high performance and reliability are required.
| Qty | Low | High |
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| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The maximum continuous drain current at 25°C is 34A.
The total power dissipation is 150W.
The typical gate threshold voltage is 3.0V.
The typical drain-source on-state resistance for the BUK456-100A is 0.057 Ohms.
The package type is TO220AB.