FDPF10N60NZ
On Semiconductor
N-Channel MOSFET, 600V drain-source voltage, 10A drain current, 750mOhm on-resistance, TO-220F through-hole package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,750 pcs
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5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The BTS112A is an N-Channel Power MOSFET manufactured by Infineon Technologies. It is categorized under Discrete Semiconductor Products in the Transistors - FETs, MOSFETs - Single segment, and is intended for use as a single switching component in electronic circuits.
Based on existing compliance data, the BTS112A is listed as RoHS3 Compliant, with a Moisture Sensitivity Level (MSL) of 1 (Unlimited) and REACH Unaffected status. These environmental and handling ratings indicate that the part is designed to meet lead-free requirements and has minimal moisture sensitivity during assembly.
As an N-Channel Power MOSFET, it is a discrete semiconductor device suitable for switching and power management applications where an N-channel transistor is required.
The BTS112A is listed as RoHS3 Compliant in the existing database. This value is unverified, and a source conflict exists (Mouser indicates non-RoHS).
The BTS112A is listed as MSL 1 (Unlimited), meaning unlimited floor life during assembly. This value is unverified.
The BTS112A is listed as REACH Unaffected. This value is unverified.
The BTS112A is an N-Channel Power MOSFET, classified as a single MOSFET.
