NVH4L040N120SC1 The ON Semiconductor NVH4L040N120SC1 is a Silicon Carbide N-Channel MOSFET designed for high-performance applications. It offers a 1200V drain-source voltage and a continuous drain current of 58A.
Mfr Part #:

NVH4L040N120SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVH4L040N120SC1 is a Silicon Carbide N-Channel MOSFET designed for high-performance applications. It offers a 1200V drain-source voltage and a continuous drain current of 58A.
✓ Total Stock: 51,750 pcs
$ Price Range: $0.99

NVH4L040N120SC1 Available from 1 distributor

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✓ Non-Authorised
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NVH4L040N120SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVH4L040N120SC1 Description

Short technical summary and product information.

The ON Semiconductor NVH4L040N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It features a high drain-to-source voltage (Vdss) of 1200V and a maximum continuous drain current of 58A at 25°C case temperature.

 

Key electrical characteristics include a typical on-resistance (Rds(on)) of 40 mOhm at 35A and 20V gate-source voltage, and a maximum gate charge (Qg) of 106 nC at 20V. The device also boasts a low output capacitance (Coss) of 137 pF, contributing to high-speed switching capabilities.

 

This MOSFET operates within a wide temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 319W (Tc). It is packaged in a TO-247-4L through-hole package.

 

Typical applications include automotive on-board chargers and DC-DC converters for electric and hybrid electric vehicles (EV/HEV). The device is AEC-Q101 qualified and RoHS compliant.

NVH4L040N120SC1 Quick Information

Product Type: MOSFET
Series: NVH4L040N120SC1
Canonical Name: NVH4L040N120SC1
Subcategory: N-Channel

NVH4L040N120SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NVH4L040N120SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVH4L040N120SC1 Features

  • 1200V drain-source voltage rating.
  • 58A continuous drain current.
  • 40mOhm typical on-resistance.
  • 106nC maximum gate charge.
  • TO-247-4L through-hole package.

NVH4L040N120SC1 Applications

  • High-voltage power switching circuits
  • Motor drive in industrial applications
  • Power supply regulation
  • High-voltage inverter systems

NVH4L040N120SC1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVH4L040N120SC1?

The maximum drain-to-source voltage (Vdss) is 1200 V.

What is the typical on-resistance of the NVH4L040N120SC1?

The typical on-resistance (Rds(on)) is 40 mOhm.

What is the maximum continuous drain current?

The maximum continuous drain current is 58A at 25°C case temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVH4L040N120SC1 supplied in?

The device is supplied in a TO-247-4L package.

Is the NVH4L040N120SC1 RoHS compliant?

Yes, the device is RoHS3 Compliant.

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