| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Junction Temperature |
The BT151-500C from NXP Semiconductors is a planar passivated Silicon Controlled Rectifier (SCR) housed in a TO220 plastic package. It is engineered for applications demanding robust bidirectional blocking voltage capability and high thermal cycling performance.
Key electrical specifications include a repetitive peak off-state voltage (VDRM) and repetitive peak reverse voltage (VRRM) of 500V. The average on-state current (IT(AV)) is rated at 7.5A under specific conditions, with an RMS on-state current (IT(RMS)) of 12A. The junction temperature (Tj) has a maximum rating of 125°C.
This SCR offers a gate trigger current (IGT) typically 2mA and a maximum of 15mA at 25°C. The rate of rise of off-state voltage (dVD/dt) ranges from a minimum of 200 V/μs to a maximum of 1000 V/μs under specified test conditions.
Applications for the BT151-500C include ignition circuits, motor control, protection circuits, and voltage regulation. It is supplied in a TO220 package, suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.30 | $2.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak off-state voltage (VDRM) for the BT151-500C is 500V.
The average on-state current (IT(AV)) for the BT151-500C is 7.5A under half sine wave conditions with Tmb ≤ 109 °C.
The BT151-500C SCR is supplied in a TO220 package.
The maximum junction temperature (Tj) for the BT151-500C is 125°C.