| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
904,000 pcs
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904000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Average Rectified Current | |
| Capacitance | |
| Forward Voltage | |
| Junction Temperature | |
| Mounting Type | |
| Reverse Current | |
| SVHC Present | |
| Storage Temperature |
The Renesas HRW0203A is a Silicon Schottky Barrier Diode designed for rectifying applications, offering a low forward voltage drop for high efficiency. It features a repetitive peak reverse voltage of 30V and an average rectified current of 200mA.
This diode is supplied in an MPAK package, which is suitable for high-density surface mounting and high-speed assembly processes. The electrical characteristics include a maximum forward voltage of 0.5V at 200mA and a maximum reverse current of 50µA at 30V. The typical capacitance is 40pF at 1MHz and 0V reverse voltage.
Absolute maximum ratings include a non-repetitive peak forward surge current of 2A, a maximum junction temperature of 125°C, and a storage temperature range of -55°C to +125°C. The MPAK package dimensions are detailed in the datasheet for integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage (VRRM) for the HRW0203A is 30V.
The average rectified current (IO) for the HRW0203A is 200mA.
The maximum forward voltage (VF) for the HRW0203A is 0.5V when the forward current (IF) is 200mA.
The typical capacitance (C) of the HRW0203A is 40pF when measured at 0V reverse voltage and 1MHz.
The HRW0203A diode is supplied in the MPAK package.