IPA60R400CE
Infineon
IPA60R400CE is an N-Channel power MOSFET from Infineon with 600V breakdown voltage and 400mΩ maximum on-resistance.
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42 pcs
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42 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSS92 from Siemens is a P-channel enhancement mode vertical D-MOS transistor designed for high-speed switching applications. It features a maximum drain-source voltage of 240V and a continuous drain current of 150mA.
Key electrical characteristics include a drain-source on-state resistance of up to 20Ω at 100mA and a gate-source threshold voltage between -0.8V and 2.8V. The transistor also exhibits low leakage currents and capacitances, with input capacitance typically at 65pF.
This device is suitable for applications such as line current interrupters in telephony and as drivers for relays and transformers. Its direct interface capability with C-MOS and TTL logic makes it versatile for various circuit designs.
The BSS92 is supplied in a TO-92 (SOT54) variant package, suitable for through-hole mounting.
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSS92 is 240V.
The continuous drain current (ID) for the BSS92 is 150mA.
The drain-source on-state resistance (RDSon) is typically 10Ω and a maximum of 20Ω under conditions of ID = -100 mA and VGS = -10 V.
The total power dissipation (Ptot) for the BSS92 is 1W at an ambient temperature of 25°C.
The BSS92 is available in a TO-92 (SOT54) variant package.
The BSS92 is used as a line current interrupter in telephony applications, and as a relay, high speed, and line transformer driver.
