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22,199 pcs
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22199 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4401 is a versatile NPN bipolar junction transistor (BJT) from On Semiconductor, designed for small-signal amplification tasks. It is housed in a standard TO-92-3 package, making it suitable for through-hole mounting.
Key electrical characteristics include a maximum collector-emitter voltage (Vceo) of 40V and a maximum collector current (Ic) of 600mA. It offers a minimum DC current gain (hFE) of 100 at 0.15A and a maximum collector-emitter saturation voltage (Vce(sat)) of 0.95V at 15mA collector current. The transistor operates reliably within a temperature range of -55°C to 150°C.
Its NPN configuration allows for signal amplification and precise current flow control. The low saturation voltage contributes to efficient switching and reduced power dissipation. The 2N4401 is well-suited for applications requiring moderate current levels and good high-frequency response, such as audio amplifiers, signal processing circuits, voltage regulators, and oscillator circuits.
This component is recognized for its versatility and reliability, making it a popular choice for hobbyists, students, and professionals in various electronic designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the 2N4401 transistor is 40V.
The maximum collector current (Ic) for the 2N4401 transistor is 600mA.
The 2N4401 transistor comes in a TO-92-3 package.
The 2N4401 transistor can operate between -55°C and 150°C.
The minimum DC current gain (hFE) for the 2N4401 transistor is 100 at 0.15A.
The 2N4401 transistor is designed for through-hole mounting.