Mfr Part #:

IPA60R190P6

Mfr Name: Infineon

The Infineon IPA60R190P6 is a 650V N-channel CoolMOS P6 series power MOSFET. It offers low conduction and switching losses for efficient power management applications.

✓ Total Stock: 37,330 pcs

$ Price Range: $1.67

IPA60R190P6 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	30,000 pcs On Request	30000 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	5,923 pcs On Request	5923 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,407 pcs On Request	1407 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPA60R190P6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	37nC
Halogen Free	True
Lead Spacing	2.54 mm
Mounting Type	Through Hole
Storage Temperature	-55°C ~ 150°C

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IPA60R190P6 Description

Short technical summary and product information.

The Infineon IPA60R190P6 is a high-voltage N-channel power MOSFET from the CoolMOS P6 series, designed using the superjunction principle. This technology provides significant benefits in terms of efficiency, compactness, and thermal performance for switching applications.

Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 190mΩ, and a typical Gate Charge (Qg) of 37nC. It also features a pulsed drain current (ID,pulse) of 57A and an energy loss (Eoss) of 4.9µJ at 400V.

The device is suitable for applications such as PFC stages, hard-switching PWM, and resonant switching stages in power supplies, adapters, lighting, servers, and UPS systems. It is packaged in a TO-220 FullPAK for through-hole mounting.

Features include increased MOSFET dv/dt ruggedness, very low losses due to low FOM (Rdson*Qg and Eoss), high commutation ruggedness, and ease of use. The component is Pb-free plating and halogen-free mold compound, qualified for industrial-grade applications.

IPA60R190P6 Quick Information

Product Type: Power MOSFET

Series: P6

Canonical Name: Infineon CoolMOS P6 Series N-Channel Power MOSFET

Subcategory: N-Channel Power MOSFET

IPA60R190P6 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: True

IPA60R190P6 Estimated Pricing

Qty	Low	High
1+	$1.67	$1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA60R190P6 Features

650V Drain-Source Voltage rating.
Low 190mΩ maximum On-Resistance.
Typical 37nC Gate Charge for efficient switching.
TO-220 FullPAK package for through-hole mounting.
Pb-free and halogen-free construction.

IPA60R190P6 Applications

Power Factor Correction (PFC) stages.
Hard-switching PWM applications.
Resonant switching stages.
Power supplies and adapters.
Server and Telecom equipment.

IPA60R190P6 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum Drain-Source Voltage for the IPA60R190P6?

The maximum Drain-Source Voltage (Vds) is 650V.

What is the maximum On-Resistance of the IPA60R190P6 MOSFET?

The maximum On-Resistance (Rds(on)) is 190mΩ.

What is the typical Gate Charge for the IPA60R190P6?

The typical Gate Charge (Qg) is 37nC.

What package type is the IPA60R190P6 supplied in?

The IPA60R190P6 is supplied in a PG-TO 220 FullPAK package.

Is the IPA60R190P6 RoHS compliant?

The RoHS Status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

Does the IPA60R190P6 meet REACH requirements?

The REACH Status is REACH Unaffected.