| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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324 pcs
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324 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation | |
| Tape & Reel |
The Infineon Technologies BSS139 is a SIPMOS® Small-Signal-Transistor featuring N-channel depletion mode operation. It is designed for various applications requiring a reliable small signal MOSFET.
Key electrical characteristics include a maximum drain-source breakdown voltage of 250V and a maximum drain-source on-state resistance of 30 Ω at a gate-source voltage of 0V and drain current of 15mA. The gate threshold voltage typically ranges from -2.1V to -1V. Dynamic characteristics such as input capacitance (Ciss) are around 7.6pF, output capacitance (Coss) around 8.4pF, and reverse transfer capacitance (Crss) around 3.3pF.
This device is available in the PG-SOT-23 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. The BSS139 is Pb-free and RoHS compliant.
With its specific characteristics, the BSS139 is suitable for general-purpose switching and amplification in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage for the BSS139 is 250V.
The typical gate threshold voltage (VGS(th)) for the BSS139 is -1.4V.
The maximum on-state resistance (RDS(on)) for the BSS139 is 30 Ω.
The BSS139 MOSFET is supplied in the PG-SOT-23 package.
The BSS139 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSS139 is 1 Unlimited.
