| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,990 pcs
|
1990 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,990 pcs
|
1990 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Infineon BSS139 is a SIPMOS Small-Signal-Transistor featuring N-channel depletion mode operation. It is designed for applications requiring a breakdown voltage of up to 250V.
Key electrical characteristics include a gate threshold voltage typically around -1.4V and a maximum on-state resistance of 30 Ohms at VGS=0V and ID=15mA. The device also offers a typical on-state resistance of 7.8 Ohms at VGS=10V and ID=0.1mA. Dynamic characteristics such as input capacitance (Ciss) are typically 7.6pF, output capacitance (Coss) at 8.4pF, and reverse transfer capacitance (Crss) at 3.3pF.
Packaged in a PG-SOT-23, the BSS139 is suitable for surface-mount designs. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 0.36W at 25°C ambient temperature. The device is Pb-free and RoHS compliant.
This MOSFET is well-suited for general-purpose switching and amplification tasks in various electronic circuits where a depletion-mode device is preferred.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the BSS139 is 250V.
The typical gate threshold voltage for the BSS139 is -1.4V.
The maximum on-state resistance of the BSS139 is 30 Ohms.
The BSS139 MOSFET is supplied in a PG-SOT-23 package.
The operating and storage temperature range for the BSS139 is -55°C to 150°C.
The BSS139 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSS139 is 1 Unlimited.