| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,040 pcs
|
5040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Power Dissipation | |
| Tape & Reel |
The Infineon BSS169 is a SIPMOS Small-Signal MOSFET featuring an N-channel depletion mode construction. It is designed for various applications requiring efficient switching and signal amplification.
Key electrical characteristics include a drain-source breakdown voltage of 100V and a gate threshold voltage typically around -2.2V. The device offers a low drain-source on-state resistance, with a maximum of 12W at VGS=0V and ID=0.05A, and a typical 2.9W at VGS=10V and ID=0.19A. Dynamic characteristics such as input capacitance (Ciss) are typically 51pF, and output capacitance (Coss) is typically 9pF.
Packaged in a compact PG-SOT-23, this MOSFET is suitable for surface-mount designs. It is rated for a continuous drain current of 0.17A at 25°C ambient temperature. The device also features dv/dt rating and is qualified according to AEC Q101 standards.
Environmental compliance includes Pb-free lead-plating and halogen-free construction, making it suitable for lead-free and halogen-free manufacturing processes. The operating and storage temperature range is from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 100V.
The continuous drain current is 0.17A at 25°C and 0.14A at 70°C.
Typical on-resistance is 5.3Ω at VGS=0V and 2.9Ω at VGS=10V.
The gate threshold voltage ranges from -2.9V to -1.8V, with a typical value of -2.2V.
The operating and storage temperature range is -55°C to 150°C.
The BSS169 comes in a PG-SOT-23 surface-mount package.
Yes, the BSS169 is halogen-free according to AEC61249-2-21.