DMP3099L-7
Diodes Incorporated
P-Channel enhancement mode MOSFET with 30V drain-source voltage and 3.8A continuous drain current. Features low on-resistance of 65mΩ at 10V gate drive.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Mounting Type | |
| Tape & Reel | |
| Technology |
The BSO301SP is a P-Channel Power MOSFET manufactured by Infineon Technologies using Metal Oxide technology. It is designed for surface mount applications and comes in a SOT-223 package.
Key electrical specifications include a maximum drain-source voltage of 30V, a continuous drain current of 12.6A, and a drain-source on-resistance of 95 mOhm. The maximum power dissipation is 1.5W.
The surface mount SOT-223 package allows for compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The maximum continuous drain current (Id) is 12.6A.
The maximum drain-source on-resistance (Rds(on)) is 95 mOhm.
The BSO301SP is available in a SOT-223 surface mount package.
It is a P-Channel MOSFET.
It is a surface mount device.
The maximum power dissipation is 1.5W.
