FDN361BN The FDN361BN is a 30V N-Channel MOSFET from On Semiconductor. It features a maximum continuous drain current of 1.4A and is offered in a SOT-23-3 surface-mount package.
Mfr Part #:

FDN361BN

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDN361BN is a 30V N-Channel MOSFET from On Semiconductor. It features a maximum continuous drain current of 1.4A and is offered in a SOT-23-3 surface-mount package.
✓ Total Stock: 921,006 pcs
$ Price Range: $0.07 - $0.40

FDN361BN Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDN361BN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDN361BN Description

Short technical summary and product information.

The FDN361BN is an N-Channel enhancement-mode MOSFET designed for low-voltage applications. It is rated for a drain-source voltage of 30V and a continuous drain current of 1.4A at 25°C ambient. The device features a low on-resistance of 55mΩ maximum at Vgs=10V and Id=1.4A, and 70mΩ maximum at Vgs=4.5V and Id=1.2A. The gate threshold voltage ranges from 1V to 3V at Id=250µA.

 

This MOSFET offers fast switching with typical turn-on delay of 6ns and turn-off delay of 29ns. Input capacitance is 193pF maximum at Vds=15V. The device includes a body diode with a maximum forward voltage of 1.2V and reverse recovery time of 22ns. Power dissipation is limited to 500mW at 25°C ambient.

 

The FDN361BN is housed in a compact SOT-23-3 surface-mount package (also known as TO-236-3 or SC-59). It is suitable for automated assembly and operates over a junction temperature range of -55°C to 150°C. Typical applications include load switching, DC-DC converters, and power management in battery-powered devices.

FDN361BN Quick Information

Product Type: Single MOSFET
Series: FDN361BN
Canonical Name: MOSFET N-CH 30V 1.4A SOT-23-3
Subcategory: N-Channel MOSFET

FDN361BN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDN361BN Estimated Pricing

Qty Low High
1+ $0.40 $0.40
10+ $0.24 $0.24
50+ $0.18 $0.18
100+ $0.15 $0.15
500+ $0.11 $0.11
3,000+ $0.08 $0.08
9,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDN361BN Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 1.4A at 25°C.
  • Low on-resistance: 55mΩ max at 10V gate drive.
  • Surface-mount SOT-23-3 package.
  • Operating temperature range -55°C to 150°C.

FDN361BN Applications

  • Suitable for low-voltage battery-powered circuits.
  • Ideal for notebook computer power management.
  • Used in PCMCIA card interfaces.
  • Applicable for load switching in portable devices.
  • Suitable for DC-DC converter circuits.

FDN361BN FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type of the FDN361BN?

The FDN361BN is offered in a SOT-23-3 surface-mount package (also known as TO-236-3 or SC-59).

What is the operating temperature range of the FDN361BN?

The operating junction temperature range is -55°C to 150°C.

Is the FDN361BN RoHS compliant?

Yes, the FDN361BN is listed as RoHS3 compliant, though this is unverified against the manufacturer datasheet.

What is the maximum drain-source voltage for the FDN361BN?

The maximum drain-source voltage (Vdss) is 30V.

What is the gate threshold voltage of the FDN361BN?

The gate threshold voltage (Vgs(th)) ranges from 1V minimum to 3V maximum at Id=250µA.

What is the on-resistance of the FDN361BN at 10V gate drive?

The maximum on-resistance (Rds(on)) is 55mΩ at Vgs=10V and Id=1.4A. Typical value is 40mΩ.

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