Mfr Part #:

SI2307CDS-T1-GE3

Mfr Name: Vishay

The Vishay Siliconix Si2307CDS-T1-GE3 is a P-Channel 30V MOSFET in a SOT-23 package. It features low RdsOn and is suitable for load switching applications.

✓ Total Stock: 783,611 pcs

$ Price Range: $0.99

SI2307CDS-T1-GE3 Available from 7 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	475,789 pcs On Request	475789 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	292,020 pcs On Request	292020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Risen Electronics ✓ Non-Authorised Inventory information	12,000 pcs On Request	12000 pcs	On Request	1	On Request	On Request	On Request	On Request	2026-02-16 21:33:16
Xingangxin ✓ Non-Authorised Inventory information	3,147 pcs On Request	3147 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	375 pcs On Request	375 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	195 pcs On Request	195 pcs	On Request	1	On Request	On Request	16+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	85 pcs On Request	85 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SI2307CDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Siliconix Si2307CDS-T1-GE3 is a P-Channel TrenchFET power MOSFET designed for load switching in portable devices. It offers a Drain-Source Voltage (Vdss) of 30V and a continuous drain current of up to 3.5A at 25°C case temperature.

Key electrical characteristics include a maximum RdsOn of 88mOhm at 10V Vgs and 3.5A Id, and a gate charge (Qg) of 4.1nC typical at 4.5V Vgs. The device operates within a temperature range of -55°C to +150°C.

Packaged in a SOT-23-3 (TO-236) surface mount package, this MOSFET is suitable for compact designs. Its thermal resistance is rated at 115°C/W junction-to-ambient and 70°C/W junction-to-foot under steady state conditions.

SI2307CDS-T1-GE3 Quick Information

Product Type: MOSFET

Canonical Name: Si2307CDS-T1-GE3 P-Channel 30 V (D-S) MOSFET

Subcategory: Single MOSFETs

SI2307CDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SI2307CDS-T1-GE3 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2307CDS-T1-GE3 Features

P-Channel 30V TrenchFET power MOSFET.
Low RdsOn: 88mOhm at 10V Vgs.
Continuous drain current up to 3.5A.
SOT-23-3 surface mount package.
Wide operating temperature range.

SI2307CDS-T1-GE3 Applications

Suitable for load switching circuits.
Ideal for battery protection applications.
Used in power management of portable devices.
Common in DC/DC converter designs.

SI2307CDS-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the Drain-Source Breakdown Voltage?

-30 V

What is the maximum continuous drain current?

3.5 A

What is the Rds On at Vgs = 10V?

88 mOhm

What is the package type?

SOT-23-3

What is the operating temperature range?

-55°C ~ 150°C

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	3.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds	340 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	1.1W (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs	88 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Supplier Package	SOT-23-3 (TO-236)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3 V