| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature |
The Nexperia BSH121 is an N-channel enhancement mode field-effect transistor designed with TrenchMOS technology. This component offers very fast switching speeds and a low threshold voltage, making it suitable for various applications.
Key electrical characteristics include a maximum drain-source voltage of 55V and a continuous drain current of up to 300mA at 25°C with VGS = 4.5V. The drain-source on-state resistance (RDSon) is specified at various conditions, with a maximum of 4.0 Ω at VGS = 4.5V and ID = 500mA.
The BSH121 is housed in a subminiature SOT-323 surface mount package. Its operating junction temperature ranges from -65°C to 150°C, with a total power dissipation of 0.7W at 25°C.
Applications for the BSH121 include battery management, high-speed switching, and logic level translation. Its compact package and performance characteristics make it a versatile choice for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 55 V.
The continuous drain current (ID) is 300 mA at 25°C with VGS = 4.5V.
The typical RDSon is 2.3 Ω at VGS = 4.5V and ID = 500 mA.
The BSH121 is available in a SOT-323 package.
The operating junction temperature (Tj) ranges from -65°C to 150°C.
The BSH121 is used for battery management, high-speed switching, and logic level translation.
