BSG0813NDI The Infineon Technologies BSG0813NDI is a dual asymmetric N-channel OptiMOS™5 MOSFET. It features logic-level gate drive and is optimized for high-performance buck converters.
Mfr Part #:

BSG0813NDI

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies BSG0813NDI is a dual asymmetric N-channel OptiMOS™5 MOSFET. It features logic-level gate drive and is optimized for high-performance buck converters.
✓ Total Stock: 9,977 pcs
$ Price Range: $2.40

BSG0813NDI Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,977 pcs
9977 pcs On Request 1 On Request On Request 08+ On Request On Request

BSG0813NDI Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free

BSG0813NDI Description

Short technical summary and product information.

The Infineon Technologies BSG0813NDI is a dual asymmetric N-channel MOSFET from the OptiMOS™5 family. It is designed for high-performance buck converter applications and features a logic-level gate drive, rated for 4.5V.

 

Key electrical specifications include a Drain-Source Breakdown Voltage of 25V. The on-state resistance (Rds(on)) ranges from 1.2mΩ to 4mΩ depending on the specific MOSFET and test conditions. Continuous drain current (Id) is rated up to 50A at 70°C case temperature with VGS=10V or 4.5V.

 

This MOSFET is housed in a PG-TISON8-4 package and is suitable for surface mounting. It is Pb-free and RoHS compliant, with halogen-free material composition according to IEC61249-2-21. The operating temperature range is -55°C to 150°C.

 

It includes a monolithic integrated Schottky-like diode, optimizing performance for demanding power applications.

BSG0813NDI Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Dual Asymmetric N-channel OptiMOS™5 MOSFET
Subcategory: N-Channel

BSG0813NDI Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSG0813NDI Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSG0813NDI Features

  • Dual asymmetric N-channel OptiMOS™5 MOSFET
  • Logic level gate drive (4.5V rated)
  • Optimized for high performance buck converters
  • Monolithic integrated Schottky like diode
  • Pb-free lead plating; RoHS compliant

BSG0813NDI Applications

  • High-performance buck converter designs
  • Power supply applications
  • Switching power supplies
  • DC-DC conversion circuits

BSG0813NDI FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Breakdown Voltage for the BSG0813NDI?

The Drain-Source Breakdown Voltage (Vds_br) is 25V.

What is the typical on-state resistance (Rds(on)) for the BSG0813NDI?

The typical on-state resistance is 1.2mΩ for Q2 at VGS=10V, ID=20A, and 4mΩ for Q1 at VGS=4.5V, ID=20A.

What is the continuous drain current rating for the BSG0813NDI?

The continuous drain current (Id) is rated at 50A under various conditions, including TC=70°C, VGS=10V and TC=70°C, VGS=4.5V.

What package type is the BSG0813NDI MOSFET supplied in?

The BSG0813NDI is supplied in the PG-TISON8-4 package.

What is the operating temperature range for the BSG0813NDI?

The operating and storage temperature range is -55°C to 150°C.

Is the BSG0813NDI RoHS compliant?

Yes, the BSG0813NDI is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1.

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