| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,977 pcs
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9977 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The Infineon Technologies BSG0813NDI is a dual asymmetric N-channel MOSFET from the OptiMOS™5 family. It is designed for high-performance buck converter applications and features a logic-level gate drive, rated for 4.5V.
Key electrical specifications include a Drain-Source Breakdown Voltage of 25V. The on-state resistance (Rds(on)) ranges from 1.2mΩ to 4mΩ depending on the specific MOSFET and test conditions. Continuous drain current (Id) is rated up to 50A at 70°C case temperature with VGS=10V or 4.5V.
This MOSFET is housed in a PG-TISON8-4 package and is suitable for surface mounting. It is Pb-free and RoHS compliant, with halogen-free material composition according to IEC61249-2-21. The operating temperature range is -55°C to 150°C.
It includes a monolithic integrated Schottky-like diode, optimizing performance for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (Vds_br) is 25V.
The typical on-state resistance is 1.2mΩ for Q2 at VGS=10V, ID=20A, and 4mΩ for Q1 at VGS=4.5V, ID=20A.
The continuous drain current (Id) is rated at 50A under various conditions, including TC=70°C, VGS=10V and TC=70°C, VGS=4.5V.
The BSG0813NDI is supplied in the PG-TISON8-4 package.
The operating and storage temperature range is -55°C to 150°C.
Yes, the BSG0813NDI is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.