SMF28A-GS08
Vishay
The Vishay Dale SMF28A-GS08 is a TVS diode designed for transient voltage suppression. It offers a 28V operating voltage and 200W peak pulse power capability.
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75,000 pcs
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75000 pcs | On Request | 1 | On Request | On Request | 1412+ | On Request | On Request | |
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190 pcs
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190 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free |
The Infineon Technologies BSG0811ND is a dual asymmetric N-channel OptiMOS™5 MOSFET designed for high-performance buck converter applications. This device features a logic-level gate, making it suitable for systems operating with a 4.5V gate drive.
Key electrical characteristics include a Drain-Source Breakdown Voltage of 25V and a Continuous Drain Current of up to 50A at 70°C case temperature with a 10V gate-source voltage. The Drain-Source On-State Resistance is as low as 0.8mΩ (typical) at VGS=10V and ID=20A for the Q2 transistor, and 3mΩ (typical) for the Q1 transistor under the same conditions. It also offers a low 1.1mΩ (typical) Rds(on) at VGS=4.5V and ID=20A for Q2.
The MOSFET operates over a temperature range of -55°C to 150°C. It is housed in a PG-TISON8-4 package suitable for surface mounting.
This component is Pb-free and Halogen-free, adhering to environmental standards. It is qualified according to JEDEC for target applications.
| Qty | Low | High |
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| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage is 25V.
The typical Gate Threshold Voltage is 1.6V.
The maximum continuous drain current is 50A.
The package type is PG-TISON8-4.
Yes, the BSG0811ND is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.