| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The Infineon Technologies BSC120N03MS is an N-channel Power MOSFET from the OptiMOS™3 M-Series. It is designed for 5V driver applications, including notebook, VGA, and POL power supplies, and is optimized for high-frequency SMPS with a low FOM.
Key electrical characteristics include a drain-source breakdown voltage of 30V and a maximum continuous drain current of up to 39A at 25°C case temperature. The device exhibits very low on-resistance, with a maximum of 14 mΩ at VGS=4.5V and ID=20A, and 12 mΩ at VGS=10V and ID=30A. Dynamic characteristics such as input capacitance (Ciss) are typically 1100pF, and output capacitance (Coss) is typically 390pF.
This MOSFET is 100% avalanche tested and features superior thermal resistance. It operates over a wide temperature range of -55°C to 150°C. The component is supplied in a PG-TDSON-8 package suitable for surface mounting.
Environmental compliance includes Pb-free plating and RoHS compliance, as well as being Halogen-free according to IEC61249-2-21.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is a minimum of 30V.
The typical gate threshold voltage is 1V, with a maximum of 2V.
The maximum continuous drain current is 39A at VGS=10V and TC=25°C.
The typical on-state resistance is 12.5 mΩ, with a maximum of 14 mΩ.
The package type is PG-TDSON-8.
The operating and storage temperature range is -55°C to 150°C.
The product is listed as RoHS3 Compliant.