BSC007N04LS6
Infineon
The Infineon BSC007N04LS6 is an N-channel MOSFET designed for synchronous applications. It offers very low on-resistance and high current capabilities.
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6,020 pcs
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6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4,004 pcs
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4004 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BSC093N15NS5ATMA1 is an N-Channel MOSFET belonging to the Power MOSFET family. It is designed for various power switching applications.
Key electrical characteristics include a Drain-Source Breakdown Voltage of 150V and a Continuous Drain Current of 100A at 25°C with a VGS of 10V. The on-resistance (Rds On) is specified as a maximum of 9.3 mOhms at VGS = 10V and ID = 50A, and 10.5 mOhms at VGS = 4.5V and ID = 50A. The typical Gate Charge (Qg) is 45 nC under specific test conditions.
This MOSFET operates within a temperature range of -55°C to 175°C. It is housed in a TDSON-8 package and is designed for surface mount applications, facilitating integration into compact electronic designs.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted with low confidence due to lack of verification.
| Qty | Low | High |
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| 1+ | $5.18 | $5.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
N-Channel
150 V
100 A
9.3 mOhms
-55 °C to 175 °C
TDSON-8
RoHS3 Compliant
