| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,504 pcs
|
3504 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Tape & Reel |
The Infineon Technologies IPD047N03LF2SATMA1 is a high-performance N-channel MOSFET. It is rated for a maximum drain-source voltage of 30V and a continuous drain current of 50A at 25°C with Vgs=10V. The on-resistance (Rds On) is as low as 4.7 mOhm at Vgs=10V and Id=50A, and 5.5 mOhm at Vgs=4.5V and Id=50A.
This MOSFET is suitable for various power management applications. Key electrical characteristics include a typical gate charge of 45 nC and input capacitance of 600 pF. The operating temperature range is up to 150°C.
The IPD047N03LF2SATMA1 comes in a TO-252-3 surface mount package. It is supplied on tape and reel with a standard package quantity of 2500 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.71 | $1.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
50A at 25°C case temperature.
4.7mOhm at Vgs=10V, Id=50A.
45nC typical.
150°C.
TO-252-3 (DPAK) surface mount.
Surface mount.