| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
618 pcs
|
618 pcs | On Request | 1 | On Request | On Request | 1823+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature |
The Infineon Technologies BSC007N04LS6 is a high-performance N-channel Power MOSFET from the OptiMOS™ 6 family. It is specifically optimized for synchronous applications, delivering very low on-resistance (RDS(on)) of 0.7 mΩ at a VGS of 10V and a continuous drain current (ID) of up to 381A at 25°C.
This MOSFET features a drain-source voltage (VDS) rating of 40V and is 100% avalanche tested for enhanced reliability. It is designed with superior thermal resistance and operates at a maximum junction temperature of 175°C. The device is supplied in a PG-TDSON-8 package, suitable for surface mounting.
Key electrical parameters include a maximum pulsed drain current of 1524A and a gate-source voltage range of ±20V. The BSC007N04LS6 is fully qualified according to JEDEC standards for industrial applications, making it a robust choice for demanding power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The maximum on-resistance is 0.7mOhm at VGS=10V and ID=381A.
The maximum continuous drain current is 381A at TC=25°C with VGS=10V.
The BSC007N04LS6 is available in a PG-TDSON-8 surface-mount package.
The maximum operating junction temperature is 175°C.
Yes, the BSC007N04LS6 is halogen-free.