| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,800 pcs
|
27800 pcs | On Request | 1 | On Request | On Request | 12+PBF | On Request | On Request | |
|
3,868 pcs
|
3868 pcs | On Request | 1 | On Request | On Request | 1242+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The Infineon Technologies BSC0924NDI is a dual N-channel OptiMOS™ MOSFET designed for high-performance applications, particularly Buck converters. It features an integrated monolithic Schottky-like diode and is 100% avalanche tested.
Key electrical specifications include a drain-source breakdown voltage of 30V and a continuous drain current of up to 40A at 70°C case temperature. The drain-source on-state resistance is as low as 5.2 mΩ at VGS=4.5V and ID=20A for Q2. It operates with a logic-level gate drive (4.5V rated).
This MOSFET is qualified according to JEDEC standards and is Pb-free with RoHS compliance. It is supplied in a PG-TISON-8 package suitable for surface mounting.
It offers optimized performance for demanding power conversion tasks, providing efficient switching and low conduction losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The maximum continuous drain current is 40A at 70°C case temperature.
The typical drain-source on-state resistance is 5.2 mΩ at VGS=4.5V and ID=20A for Q2.
The package type is PG-TISON-8.
This product is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.