| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,449 pcs
|
72449 pcs | On Request | 1 | On Request | On Request | 1532+ | On Request | On Request | |
|
810 pcs
|
810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
327 pcs
|
327 pcs | On Request | 1 | On Request | On Request | 1532+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The Infineon Technologies BSC0923NDI is a Dual N-Channel OptiMOS™ MOSFET designed for high-performance buck converter applications. It features a drain-source breakdown voltage of 30V and a continuous drain current rating of up to 40A at 70°C case temperature with VGS=10V. The device is optimized for high performance and offers a logic level gate drive capability (4.5V rated).
Key electrical characteristics include a low on-state resistance (RDS(on)) as low as 3mΩ (typical) at VGS=4.5V and ID=20A for the Q2 channel. The Q1 channel offers RDS(on) as low as 5mΩ (typical) under the same conditions. The MOSFET is 100% avalanche tested and qualified according to JEDEC standards for target applications.
The BSC0923NDI comes in a PG-TISON-8 package. It is Pb-free lead plating and RoHS compliant, as well as Halogen-free according to IEC61249-2-21. The operating and storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The typical gate threshold voltage is 2.5V.
The maximum continuous drain current is 40A at TC=70°C with VGS=10V.
The maximum RDS(on) is 7mΩ for Q1 and 3.7mΩ for Q2 at VGS=10V, ID=20A.
The BSC0923NDI is available in the PG-TISON-8 package.
Yes, the BSC0923NDI is RoHS3 Compliant.
Yes, the BSC0923NDI is Halogen-free.