BSC0904NSI The Infineon Technologies BSC0904NSI is an N-channel Power MOSFET with a 30V drain-source voltage. It offers a low on-resistance of 3.7 mΩ at VGS=4.5V and a continuous drain current of up to 78A.
Mfr Part #:

BSC0904NSI

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies BSC0904NSI is an N-channel Power MOSFET with a 30V drain-source voltage. It offers a low on-resistance of 3.7 mΩ at VGS=4.5V and a continuous drain current of up to 78A.
✓ Total Stock: 35,958 pcs
$ Price Range: $1.93

BSC0904NSI Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
35,263 pcs
35263 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
695 pcs
695 pcs On Request 1 On Request On Request On Request On Request On Request

BSC0904NSI Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free

BSC0904NSI Description

Short technical summary and product information.

The Infineon Technologies BSC0904NSI is an N-channel OptiMOSTM Power MOSFET designed for high-performance buck converters. It features a 30V drain-source voltage and a very low on-resistance of 3.7 mΩ at VGS=4.5V. The device supports a continuous drain current of up to 78A at 25°C case temperature with VGS=10V.

 

This MOSFET includes an integrated monolithic Schottky-like diode and is 100% avalanche tested. It is qualified according to JEDEC standards for target applications. The BSC0904NSI is supplied in a PG-TDSON-8 package suitable for surface mounting.

 

Key electrical parameters include a maximum gate source voltage of ±20V, a pulsed drain current of 312A, and an avalanche energy of 14mJ. The device also offers superior thermal resistance and is Pb-free and Halogen-free compliant.

BSC0904NSI Quick Information

Product Type: N-channel Power MOSFET
Canonical Name: Infineon Technologies BSC0904NSI N-channel Power MOSFET
Subcategory: N-channel

BSC0904NSI Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

BSC0904NSI Estimated Pricing

Qty Low High
1+ $1.93 $1.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC0904NSI Features

  • 30V Drain-Source Voltage rating.
  • Low 3.7 mΩ On-Resistance.
  • High 78A Continuous Drain Current.
  • Integrated Schottky-like diode.
  • Pb-free and Halogen-free compliant.

BSC0904NSI Applications

  • Suitable for high-current switching applications.
  • Ideal for power supply and motor control circuits.
  • Used in buck converters and DC-DC power modules.
  • Applicable in automotive and industrial power systems.

BSC0904NSI FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the BSC0904NSI?

The maximum drain-source voltage is 30V.

What is the typical on-resistance of the BSC0904NSI at VGS=4.5V?

The typical on-resistance is 3.7 mΩ.

What is the continuous drain current for the BSC0904NSI?

The continuous drain current is up to 78A at VGS=10V and TC=25°C.

What package type is the BSC0904NSI supplied in?

The BSC0904NSI is supplied in a PG-TDSON-8 package.

Is the BSC0904NSI RoHS compliant?

Yes, the BSC0904NSI is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BSC0904NSI?

The Moisture Sensitivity Level is 1.

Does the BSC0904NSI meet REACH regulations?

The BSC0904NSI is REACH Unaffected.

BSC0904NSI Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
SMF28A-GS08
SMF28A-GS08
Vishay
The Vishay Dale SMF28A-GS08 is a TVS diode designed for transient voltage suppression. It offers a 28V operating voltage and 200W peak pulse power capability.
View Part
TP0610K
TP0610K
Vishay
The Vishay Dale TP0610K is a P-Channel MOSFET designed for high-side switching applications. It features a 60V breakdown voltage and low on-resistance.
View Part
SI2338DS
SI2338DS
Vishay
The Vishay Dale SI2338DS is an N-Channel MOSFET designed for high-speed switching applications. It offers low on-resistance and a 30V drain-source voltage rating.
View Part
SI2347DS
SI2347DS
Vishay
The Vishay Dale SI2347DS is a P-Channel MOSFET designed for power management applications. It features a 30V drain-source voltage and low on-resistance.
View Part
Home

Categories