| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The Infineon Technologies BSC057N03MS is an N-channel Power MOSFET from the OptiMOS™3 M-Series. It is optimized for 5V driver applications, including Notebook, VGA, and POL (Point-of-Load) systems. This MOSFET offers a low on-resistance (RDS(on)) and excellent gate charge times R DS(on) product (FOM), making it suitable for high-frequency SMPS (Switched-Mode Power Supply) applications.
Key electrical characteristics include a drain-source breakdown voltage of 30V and a maximum continuous drain current of 71A at VGS=10V and TC=25°C. The device exhibits a low gate threshold voltage and low gate leakage current. Dynamic characteristics such as input capacitance, output capacitance, and switching times are also specified.
The BSC057N03MS is supplied in a PG-TDSON-8 package, suitable for surface mounting. It is 100% avalanche tested and qualified according to JEDEC standards for target applications. The component is Pb-free plated and RoHS compliant, as well as Halogen-free according to IEC61249-2-21.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The typical gate threshold voltage is 1V.
The maximum continuous drain current is 71A at VGS=10V and TC=25°C.
The typical on-resistance at VGS=4.5V and ID=30A is 5.8mW.
The BSC057N03MS is supplied in a PG-TDSON-8 package.
Yes, this MOSFET is RoHS3 Compliant.
The operating and storage temperature range is -55°C to 150°C.