| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,380 pcs
|
21380 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The Infineon Technologies BSC0501NSI is an N-channel OptiMOSTM5 Power-MOSFET designed for high-performance buck converters. It features a 30V drain-source voltage and a very low on-resistance of 1.9 mΩ at VGS=4.5V. The device supports a continuous drain current of up to 130A at 25°C case temperature with VGS=10V.
This MOSFET is optimized for efficiency and performance, incorporating a monolithic integrated Schottky-like diode. It is 100% avalanche tested and qualified according to JEDEC standards for target applications. The BSC0501NSI is supplied in a PG-TDSON-8 package suitable for surface mounting.
Key electrical parameters include a maximum gate-source voltage of ±20V, output capacitance (QOSS) of 17 nC, and total gate charge (QG) of 11.4 nC. Power dissipation is rated at 50W at 25°C case temperature and 2.5W at 25°C ambient temperature with a thermal resistance of 50 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSC0501NSI is 30V.
The maximum on-resistance (RDS(on)) for the BSC0501NSI is 1.9 mΩ when the gate-source voltage (VGS) is 4.5V.
The BSC0501NSI has a maximum continuous drain current (ID) of 130A at a case temperature of 25°C with VGS=10V.
The BSC0501NSI is supplied in a PG-TDSON-8 package.
Yes, the BSC0501NSI is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC0501NSI is 1.
The BSC0501NSI is REACH Unaffected.