| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,347 pcs
|
21347 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The Infineon Technologies BSC0500NSI is an N-channel OptiMOSTM5 Power MOSFET with a 30V drain-source voltage rating. It is optimized for high-performance buck converters and features a very low on-resistance of 1.3 mΩ at VGS=4.5V.
Key electrical parameters include a continuous drain current of up to 186A at VGS=10V and TC=25°C, and a pulsed drain current of 744A. The device is 100% avalanche tested and includes a monolithic integrated Schottky-like diode.
Packaged in a SuperSO8 (PG-TDSON-8) surface-mount package, the BSC0500NSI is Pb-free and Halogen-free, compliant with RoHS3 standards. Its design is qualified according to JEDEC for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSC0500NSI is 30V.
The maximum on-resistance (RDS(on)) for the BSC0500NSI is 1.3 mΩ at a gate-source voltage of 4.5V.
The continuous drain current (ID) for the BSC0500NSI is rated up to 186A at VGS=10V and TC=25°C.
The BSC0500NSI MOSFET is supplied in the PG-TDSON-8 package.
The BSC0500NSI is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC0500NSI is 1 Unlimited.
The BSC0500NSI is REACH Unaffected.