| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
43,000 pcs
|
43000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The Infineon Technologies BSC026N08NS5 is an N-channel OptiMOSTM5 Power Transistor designed for high-performance applications. With a maximum drain-source voltage of 80V and a maximum on-resistance of 2.6 mΩ at 10V gate-source voltage and 50A drain current, this MOSFET is optimized for synchronous rectification in server and desktop power supplies.
It offers a continuous drain current of 184A at 25°C case temperature and 116A at 100°C case temperature. The device is 100% avalanche tested and features superior thermal resistance. It is qualified according to JEDEC for target applications and is Pb-free lead plating, RoHS compliant, and Halogen-free.
The BSC026N08NS5 is supplied in a PG-TDSON-8 package suitable for surface mounting. Its electrical characteristics include a typical output capacitance (Qoss) of 88 nC and a typical total gate charge (QG(0V..10V)) of 74 nC. The operating temperature range is from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSC026N08NS5 is 80V.
The maximum on-resistance (RDS(on)) for the BSC026N08NS5 is 2.6 mΩ when measured at a gate-source voltage of 10V and a drain current of 50A.
The maximum continuous drain current (ID) is 184A at a case temperature of 25°C and 116A at a case temperature of 100°C.
The BSC026N08NS5 is supplied in a PG-TDSON-8 package.
Yes, the BSC026N08NS5 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC026N08NS5 is 1.
Yes, the BSC026N08NS5 is Halogen-free.