| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,000 pcs
|
11000 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
1,457 pcs
|
1457 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
169 pcs
|
169 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Infineon BSC026N08NS5 is an N-channel OptiMOSTM5 power transistor designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 80V and a low maximum on-resistance (RDS(on)) of 2.6 mΩ at a gate-source voltage of 10V and a drain current of 184A.
This MOSFET is optimized for synchronous rectification in server and desktop power supplies, offering superior thermal resistance and 100% avalanche tested for reliability. It operates within a temperature range of -55°C to 150°C and is supplied in a PG-TDSON-8 surface-mount package.
The BSC026N08NS5 is Pb-free and RoHS compliant, as well as halogen-free according to IEC61249-2-21, making it suitable for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSC026N08NS5 is 80V.
The maximum on-resistance (RDS(on)) of the BSC026N08NS5 is 2.6 mΩ when VGS is 10V and ID is 184A.
The continuous drain current (ID) rating for the BSC026N08NS5 at 25°C with VGS=10V is 184A.
The BSC026N08NS5 is supplied in a PG-TDSON-8 package.
The BSC026N08NS5 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC026N08NS5 is 1 Unlimited.
