SN74AHCT08NSRG4
Texas Instruments
The Texas Instruments SN74AHCT08NSRG4 is a Quad 2-Input AND Gate IC. It operates with a supply voltage range of 2V to 5.5V.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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602,667 pcs
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602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The Vishay Dale SI3900DV is a dual N-channel power MOSFET featuring TrenchFET technology. It is rated for a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of up to 2.4A at 25°C ambient temperature. The device exhibits a low on-state resistance (RDS(on)) of 0.125 Ohms at a gate-source voltage (VGS) of 4.5V and ID of 2.4A, and 0.200 Ohms at VGS of 2.5V and ID of 1.0A.
Key electrical characteristics include a gate threshold voltage (VGS(th)) between 0.6V and 1.5V, and a forward transconductance (gfs) of 5S. Dynamic characteristics such as total gate charge (Qg) are rated at 4.0 nC maximum. The MOSFET is housed in a compact TSOP-6 package suitable for surface mounting.
This component is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. It operates within a junction temperature range of -55°C to 150°C. The typical junction-to-ambient thermal resistance (RthJA) is 110°C/W.
| Qty | Low | High |
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| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the SI3900DV is 20V.
The typical on-state resistance (RDS(on)) is 0.125 Ohms at VGS = 4.5V and ID = 2.4A, and 0.200 Ohms at VGS = 2.5V and ID = 1.0A.
The continuous drain current (ID) is 2.4A at 25°C ambient temperature.
The SI3900DV is supplied in a TSOP-6 package.
Yes, the SI3900DV is RoHS3 Compliant.
The operating junction and storage temperature range is -55°C to 150°C.
