| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
48 pcs
|
48 pcs | On Request | 1 | On Request | On Request | 0706+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Storage Temperature |
The BLF4G10LS-120 from NXP Semiconductors is a 120 W LDMOS power transistor specifically engineered for base station applications. It operates effectively within the frequency range of 800 MHz to 1000 MHz, making it suitable for GSM, GSM EDGE, and CDMA base stations, as well as multicarrier applications.
Key electrical characteristics include a typical CW load power of 120 W with a gain of 19 dB. For GSM EDGE operation at 920-960 MHz, it provides a typical load power of 48 W (AV) with 19 dB gain and 40% efficiency. The transistor exhibits excellent ruggedness, capable of withstanding a VSWR of 10:1 under specified conditions.
Packaged in an earless flanged LDMOST ceramic package with 2 leads (SOT502B), this transistor is designed for ease of use with internal matching. It is sensitive to ElectroStatic Discharge (ESD) and requires careful handling during transport and assembly.
This device is designed for broadband operation and offers features such as easy power control, high efficiency, and excellent thermal stability, contributing to reliable performance in demanding RF power amplifier systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 65 V.
The typical CW load power is 120 W.
The typical gain in GSM EDGE mode is 19 dB.
The package is SOT502B, an earless flanged LDMOST ceramic package with 2 leads.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.