| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFY52 is an NPN medium power transistor manufactured by Texas Instruments, suitable for general-purpose industrial applications. It features a high current capability of up to 1A and a low voltage rating.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 20V and a maximum collector-base voltage (VCBO) of 40V. The device offers a typical DC current gain (hFE) of 142 at 150mA collector current and 10V VCE. Its transition frequency (fT) is 50MHz at 50mA collector current and 10V VCE.
Thermal characteristics are important for this device. It has a total power dissipation (Ptot) of 800mW at an ambient temperature of 25°C, and up to 5W when the case temperature is at 25°C, derating to 2.86W at 100°C. The thermal resistance from junction to ambient (Rth j-a) is 220 K/W, and from junction to case (Rth j-c) is 35 K/W.
The BFY52 is packaged in a TO-39 metal can, designed for through-hole mounting. It operates within a wide ambient temperature range of -65°C to +150°C, with a storage temperature range of the same limits. The junction temperature can reach up to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BFY52 is 20V.
The BFY52 has a maximum collector current (ICM) of 1A.
The typical DC current gain (hFE) for the BFY52 is 142 at IC = 150 mA and VCE = 10 V.
The total power dissipation (Ptot) for the BFY52 is 800mW at an ambient temperature of 25°C.
The BFY52 transistor is supplied in a TO-39 metal package.