| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFY52 is an NPN medium power transistor manufactured by ST, suitable for general-purpose industrial applications. It features a TO-39 metal package and is designed for switching and amplification tasks.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 20V and a maximum collector current (IC) of 1A. The device offers a typical DC current gain (hFE) of 142 and a transition frequency (fT) of 50 MHz under specified conditions.
Thermal management is supported by a junction-to-case thermal resistance of 35 K/W. The transistor can dissipate up to 800 mW at an ambient temperature of 25°C or up to 5W when the case temperature is at 25°C, with a derated value of 2.86W between 25°C and 100°C.
Mounting is via through-hole, making it suitable for various circuit designs. The operating temperature range is from -65°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BFY52 transistor is 20V.
The maximum continuous collector current (IC) for the BFY52 is 1A.
The BFY52 transistor comes in a TO-39 metal package.
The typical DC current gain (hFE) for the BFY52 at IC = 150 mA and VCE = 10 V is 142.
The operating ambient temperature range for the BFY52 transistor is -65°C to +150°C.