| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFY52 is an NPN medium power transistor manufactured by Thomson-CSF, suitable for general-purpose industrial applications. It features a high current capability of up to 1A and a low voltage rating, with a collector-base voltage of up to 40V and a collector-emitter voltage of up to 20V.
This transistor is packaged in a TO-39 metal case and is designed for through-hole mounting. Key electrical characteristics include a typical DC current gain (hFE) of 142 and a transition frequency (fT) of 50 MHz at specified test conditions. Thermal management is supported by a junction-to-case thermal resistance of 35 K/W.
With its robust specifications, the BFY52 is a reliable choice for various switching and amplification tasks in industrial settings.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BFY52 transistor is 20 V.
The BFY52 transistor has a maximum collector current (IC) of 1 A.
The typical DC current gain (hFE) for the BFY52 transistor is 142 at IC = 150 mA and VCE = 10 V.
The BFY52 transistor is supplied in a TO-39 metal package.