| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
94 pcs
|
94 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Tape & Reel |
The BFU590G from NXP Semiconductors is an NPN silicon microwave transistor suitable for high-speed, medium-power applications up to 2 GHz. This transistor is part of the BFU5 family, designed for small signal to medium power applications.
Key electrical characteristics include a typical frequency of 8.5 GHz, a maximum collector-emitter breakdown voltage (VCEO max) of 12V, and a maximum collector current (IC max) of 200mA. The maximum power dissipation (Ptot max) is 2W.
The BFU590G is housed in a 4-pin SOT223 plastic surface-mounted package with an increased heatsink. It is suitable for tape and reel packaging.
This RF transistor is designed for applications requiring high-speed switching and amplification in the RF spectrum.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical frequency of the BFU590G is 8.5 GHz.
The maximum collector-emitter breakdown voltage (VCEO max) for the BFU590G is 12V.
The maximum collector current (IC max) for the BFU590G is 200mA.
The BFU590G is supplied in a SOT223 package.
The BFU590G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BFU590G is 1 Unlimited.
