| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
267 pcs
|
267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The Philips BF981 is a silicon N-channel dual gate MOSFET designed for high-frequency and switching applications. It features a maximum drain-source voltage of 20V, a drain current of 20mA, and power dissipation of 225mW. The device is packaged in a compact 4-pin SOT103 package, suitable for surface-mount assembly. Its dual gate configuration allows for versatile control in RF and analog circuits, making it suitable for use in RF amplifiers, mixers, and switching circuits. The package design facilitates easy mounting on printed circuit boards, with standard dimensions compatible with surface-mount technology. The device's electrical characteristics and small form factor make it ideal for space-constrained electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (V(ds)) of the BF981 is 20V.
The drain current (I(d)) for the BF981 is 20mA.
The BF981 is packaged in a 4-pin SOT103 surface-mount package.
Yes, the BF981 is RoHS3 compliant.
The power dissipation of the BF981 is 225mW.