| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation |
The BF960 from Vishay is an N-Channel Dual Gate MOS-Field Effect Tetrode designed for RF applications. This component offers a minimum breakdown voltage of 20V and can handle a maximum power dissipation of 225mW. It is rated for operation up to a maximum temperature of 150°C.
With 4 terminals, the BF960 is suitable for various RF circuit designs. Its specifications make it a component to consider for applications requiring stable performance in demanding thermal conditions. The device is manufactured by Vishay, a recognized name in semiconductor technology.
This RF MOSFET is part of the broader category of discrete semiconductor products, specifically within the transistors, FETs, and MOSFETs for RF applications. Its dual-gate design allows for flexible circuit configurations in high-frequency applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the BF960 is 20V.
The maximum power dissipation for the BF960 is 225mW.
The BF960 can operate at a maximum temperature of 150°C.
The BF960 has 4 terminals.