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BF960 The Vishay BF960 is an N-Channel Dual Gate MOS-Field Effect Tetrode. It features a breakdown voltage of 20V and a maximum power dissipation of 225mW.
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BF960

Available from 1 distributors
Mfr Name: Siemens
Siemens
The Vishay BF960 is an N-Channel Dual Gate MOS-Field Effect Tetrode. It features a breakdown voltage of 20V and a maximum power dissipation of 225mW.
✓ Total Stock: 38 pcs
$ Price Range: $1.93

BF960 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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Non-Authorised Inventory information
38 pcs
On Request
38 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BF960 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Operating Temperature
Power Dissipation
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BF960 Description

Short technical summary and product information.

The BF960 from Vishay is an N-Channel Dual Gate MOS-Field Effect Tetrode. This component is designed for various electronic applications requiring precise signal control.

 

Key specifications include a minimum breakdown voltage of 20V and a maximum power dissipation of 225mW. The maximum operating temperature is rated at 150°C, ensuring reliable performance in demanding environments.

 

With 4 terminals, the BF960 offers flexibility in circuit design. Its dual-gate structure allows for independent control of input and output signals, making it suitable for amplification and switching applications.

 

This component is part of the broader category of Transistors - FETs, MOSFETs - Arrays, providing engineers with a specialized solution for their design needs.

BF960 Quick Information

Product Type: Transistor
Canonical Name: N-Channel Dual Gate MOS-Field Effect Tetrode
Subcategory: Dual Gate

BF960 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BF960 Estimated Pricing

Qty Low High
1+ $1.93 $1.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

BF960 Features

  • N-Channel Dual Gate MOS-Field Effect Tetrode
  • Minimum breakdown voltage of 20V
  • Maximum power dissipation of 225mW
  • Maximum operating temperature of 150°C
  • Features 4 terminals for circuit integration

BF960 Applications

  • Suitable for RF amplification circuits
  • Ideal for signal switching applications
  • Used in electronic control systems
  • Component for signal processing designs

BF960 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the BF960?

The minimum breakdown voltage is 20V.

What is the maximum power dissipation for the BF960?

The maximum power dissipation is 225mW.

What is the maximum operating temperature for the BF960?

The maximum operating temperature is 150°C.

How many terminals does the BF960 have?

The BF960 has 4 terminals.

BF960 Alternate Parts

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BF960
BF960
Philips
The Vishay BF960 is an N-Channel Dual Gate MOS-Field Effect Tetrode. It features a breakdown voltage of 20V and a maximum power dissipation of 225mW.
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BF960
BF960
NXP Semiconductors
The BF960 is an N-Channel Dual Gate MOS-Field Effect Tetrode manufactured by NXP Semiconductors. It offers a breakdown voltage of 20V and a maximum power dissipation of 225mW.
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