| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,200 pcs
|
4200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Tape & Reel |
The BF960 is an N-Channel Dual Gate MOS-Field Effect Tetrode from NXP Semiconductors. This component is designed for electronic applications requiring a tetrode configuration. It features a minimum breakdown voltage of 20V and a maximum power dissipation rating of 225mW. The maximum operating temperature for the BF960 is 150°C.
With 4 terminals, this device is suitable for various signal amplification and switching tasks. Its specifications make it a component to consider for designs operating within its electrical and thermal limits. The BF960 is part of the broader category of discrete semiconductor products, specifically within the transistor family.
Further details regarding specific applications, detailed electrical characteristics, and packaging information would typically be found in the manufacturer's datasheet. However, based on the available specifications, the BF960 is a functional tetrode transistor for general electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 20V.
The maximum power dissipation is 225mW.
The maximum operating temperature is 150°C.
The BF960 has 4 terminals.