| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,729 pcs
|
1729 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBF0202PLT1 from ON Semiconductor is a P-channel MOSFET suitable for various electronic applications. This device offers a maximum drain-source voltage of 240V and a continuous drain current rating of -300mA.
Key electrical characteristics include a maximum on-resistance (RDS(on)) of 6Ω and a drain-source resistance of 1.4Ω. The input capacitance is specified at 125pF, and the maximum rise time is 1ns.
This MOSFET is housed in a TO-261-4 surface-mount package, making it suitable for compact designs. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 225mW.
The MMBF0202PLT1 is designed for applications requiring a reliable P-channel MOSFET with moderate voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the MMBF0202PLT1 is 240V.
The continuous drain current rating of the MMBF0202PLT1 is -300mA.
The maximum on-resistance (RDS(on)) for the MMBF0202PLT1 is 6Ω.
The MMBF0202PLT1 operates between -55°C and 150°C.
The MMBF0202PLT1 is supplied in a TO-261-4 package.