| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BF570 is a single NPN bipolar junction transistor (BJT) suitable for RF applications. It operates with a maximum collector-emitter voltage (VCEO) of 15V and can handle a maximum DC collector current (IC) of 100mA. The transistor exhibits a typical gain bandwidth product (fT) of 500MHz and a maximum power dissipation (Pd) of 250mW.
This component is housed in a compact SOT-23 surface-mount package, making it ideal for space-constrained designs. It operates across a wide temperature range, from -65°C to +150°C. The BF570 offers a maximum DC current gain (Hfe) of 40 at 10mA and 1V, with a minimum Hfe also specified at 40 under the same conditions.
Key electrical characteristics include a collector-base voltage (VCBO) of 40V and an emitter-base voltage (VEBO) of 4.5V. The transistor is supplied on a reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BF570 is 15V.
The maximum continuous collector current (IC) for the BF570 is 100mA.
The typical gain bandwidth product (fT) for the BF570 is 500MHz.
The BF570 operates from a minimum temperature of -65°C to a maximum temperature of +150°C.
The BF570 is supplied in a SOT-23 surface-mount package.