DSS60601MZ4-13 The Diodes Incorporated DSS60601MZ4-13 is an NPN SMT bipolar transistor. It offers a 60V collector-emitter voltage and a 6A maximum collector current.
Mfr Part #:

DSS60601MZ4-13

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated DSS60601MZ4-13 is an NPN SMT bipolar transistor. It offers a 60V collector-emitter voltage and a 6A maximum collector current.
Total Stock: 1,833,063 pcs
$ Price Range: $0.99

DSS60601MZ4-13 Available from 4 distributors

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DSS60601MZ4-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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DSS60601MZ4-13 Description

Short technical summary and product information.

The Diodes Incorporated DSS60601MZ4-13 is a single NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a low VCE(SAT) of 300mV and a maximum DC collector current of 6A. The transistor is rated for a collector-emitter voltage (VCEO) of 60V and a collector-base voltage (VCBO) of 100V, with an emitter-base voltage (VEBO) of 6V.

 

With a power dissipation (Pd) of 1200mW and a gain-bandwidth product (fT) of 100MHz, this component is suitable for various electronic circuits. It operates within a temperature range of -55°C to +150°C. The DSS60601MZ4-13 comes in a SOT-223 package and is supplied on a reel.

 

This transistor is part of the Dss60601 series from Diodes Incorporated. Its specifications make it a versatile component for power switching and amplification tasks in electronic designs.

DSS60601MZ4-13 Quick Information

Product Type: Bipolar Transistor - BJT
Series: Dss60601
Canonical Name: Diodes Incorporated DSS60601MZ4-13 NPN SMT Bipolar Transistor
Subcategory: Bipolar Transistors - BJT

DSS60601MZ4-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DSS60601MZ4-13 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

DSS60601MZ4-13 Features

  • NPN SMT bipolar junction transistor.
  • 60V collector-emitter voltage rating.
  • 6A maximum DC collector current.
  • 1200mW power dissipation.
  • SOT-223 surface-mount package.

DSS60601MZ4-13 Applications

  • Suitable for RF signal switching applications.
  • Used in low-voltage switching circuits.
  • Ideal for high-speed switching in electronic devices.
  • Applicable in power regulation and control circuits.

DSS60601MZ4-13 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the DSS60601MZ4-13?

The maximum DC collector current is 6 A.

What is the collector-emitter voltage (VCEO) rating of the DSS60601MZ4-13?

The collector-emitter voltage (VCEO) max is 60 V.

What is the power dissipation of the DSS60601MZ4-13 transistor?

The power dissipation (Pd) is 1200 mW.

What is the operating temperature range for the DSS60601MZ4-13?

The operating temperature range is from -55 C to +150 C.

What package type is the DSS60601MZ4-13 supplied in?

The DSS60601MZ4-13 is supplied in a SOT-223 package.

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