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HN2D01FU The Toshiba HN2D01FU is a triple independent silicon epitaxial planar switching diode designed for ultra-high speed applications. It offers fast reverse recovery and low forward voltage.
Mfr Part #:

HN2D01FU

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba HN2D01FU is a triple independent silicon epitaxial planar switching diode designed for ultra-high speed applications. It offers fast reverse recovery and low forward voltage.
✓ Total Stock: 907,000 pcs
$ Price Range: $0.99

HN2D01FU Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
904,000 pcs
On Request
904000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request 1132+ On Request On Request
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HN2D01FU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Forward Current
Junction Temperature
Mounting Style
Operating Temperature Range
Peak Forward Current
Power Dissipation
Reverse Recovery Time
Reverse Voltage
SVHC Present
Storage Temperature
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HN2D01FU Description

Short technical summary and product information.

The Toshiba HN2D01FU is a versatile switching diode composed of three independent diodes, suitable for ultra-high speed switching applications. It features a low forward voltage, with a typical value of 0.98V at 100mA, and a fast reverse recovery time of 1.6ns (typ.). The diode also boasts a small total capacitance of 0.5pF (typ.).

 

Designed for surface mounting, the HN2D01FU comes in a compact SOT-363-6 package. Its absolute maximum ratings include a reverse voltage of 80V and a peak reverse voltage of 85V. The average forward current is rated at 80mA, with a peak forward current of 240mA. Power dissipation is 200mW, and it operates within a temperature range of -55°C to 125°C.

 

This component is ideal for applications requiring rapid switching and minimal signal delay. Its triple diode configuration offers flexibility in circuit design. The HN2D01FU is manufactured by Toshiba, a reputable name in semiconductor technology.

HN2D01FU Quick Information

Product Type: Switching Diode
Canonical Name: Toshiba HN2D01FU Switching Diode
Subcategory: Switching Diode

HN2D01FU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

HN2D01FU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

HN2D01FU Features

  • Triple independent switching diodes.
  • Ultra-high speed switching capability.
  • Fast 1.6ns reverse recovery time.
  • Low 0.5pF total capacitance.
  • Compact SOT-363-6 surface mount package.

HN2D01FU Applications

  • High-speed digital logic circuits.
  • Switching power supply applications.
  • Signal line protection circuits.
  • Fast signal switching applications.

HN2D01FU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the HN2D01FU?

The maximum reverse voltage is 80V, with a peak reverse voltage of 85V.

What is the forward current rating of the HN2D01FU?

The maximum average forward current is 80mA with a peak forward current of 240mA and a surge current of 1A (10ms).

What is the forward voltage of the HN2D01FU at different currents?

At 1mA the typical forward voltage is 0.62V, at 10mA it is 0.75V, and at 100mA it is 0.98V.

What is the reverse recovery time of the HN2D01FU?

The typical reverse recovery time is 1.6ns at IF=10mA.

What package is the HN2D01FU available in?

The HN2D01FU is available in a SOT-363-6 surface-mount package.

How many diodes are in the HN2D01FU?

The HN2D01FU contains three independent diodes in a triple configuration.

What is the capacitance of the HN2D01FU?

The typical total capacitance is 0.5pF at 0V reverse bias and 1MHz.

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