| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF495 is an NPN medium frequency transistor manufactured by Philips Semiconductors, housed in a TO-92 or SOT54 plastic package. This component is designed for high-frequency (HF) applications, including radio and television receivers, FM tuners, low noise AM mixer-oscillators, and IF amplifiers in AM/FM receivers.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 20V and a peak collector current (ICM) of up to 30mA. The DC current gain (hFE) for the BF495 ranges from 35 to 125 at 1mA collector current and 10V collector-emitter voltage. Its transition frequency (fT) is a minimum of 120 MHz under specified test conditions.
The transistor operates within a temperature range of -65°C to 150°C, with a total power dissipation of up to 300mW at 25°C ambient temperature. The thermal resistance from junction to ambient is 420 K/W when mounted on an FR4 printed-circuit board.
This component is suitable for various RF circuits requiring a reliable NPN transistor. Its specifications make it a good choice for signal amplification and oscillation in radio frequency designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 20 V with the base open.
The maximum DC collector current (IC) is 30 mA, and peak collector current is also 30 mA.
The BF495 is available in the TO-92 (SOT54) through-hole package.
The operating ambient temperature range is -65 °C to +150 °C.
The minimum transition frequency (fT) is 120 MHz at IC = 1 mA, VCE = 10 V, f = 100 MHz.
The DC current gain (hFE) ranges from 35 to 125 at IC = 1 mA and VCE = 10 V.
Total power dissipation is 300 mW at ambient temperature up to 25 °C.