| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
374 pcs
|
374 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The Infineon BDP950 is a PNP Silicon AF Power Transistor suitable for AF driver and output stages. It features a high collector current capability of up to 3A and a peak collector current of 5A.
This transistor boasts high current gain (hFE) ranging from 15 to 475 depending on the specific type and operating conditions. It also offers a low collector-emitter saturation voltage (VCEsat) of 0.5V maximum at 2A.
The BDP950 series includes complementary NPN types such as BDP947, BDP949, and BDP953. The BDP950 itself has a maximum collector-emitter voltage (VCEO) of 100V for the BDP954 variant, 60V for BDP950, and 45V for BDP948.
Packaged in a SOT223 surface-mount case, this AEC Q101 qualified component is Pb-free and RoHS compliant. Its thermal resistance from junction to soldering point is a maximum of 10 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum VCEO is 60 V.
The maximum IC is 3 A.
The BDP950 is housed in a SOT223 surface-mount package.
The typical fT is 100 MHz.
The maximum total power dissipation is 5 W at a soldering point temperature of 100 °C.
