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857 pcs
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857 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BDP948 is a PNP Silicon AF Power Transistor suitable for AF driver and output stages. It offers a high collector current of up to 3A and a peak collector current of 5A. The transistor provides a high current gain (hFE) and a low collector-emitter saturation voltage.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 100V for the BDP954 variant, and up to 45V for the BDP948. The base current is rated up to 200mA, with a peak base current of 500mA. The device operates with a junction temperature up to 150°C and has a total power dissipation of 5W at TS ≤ 100°C.
This transistor is housed in a SOT223 package, designed for surface mounting. Its complementary types are BDP947, BDP949, and BDP953 (NPN). The component is qualified according to AEC Q101 and is Pb-free (RoHS compliant).
Applications include AF driver and output stages where high collector current and high current gain are required. The low collector-emitter saturation voltage is beneficial for efficiency in power applications.
| Qty | Low | High |
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| 1+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum VCEO is 45V.
The BDP948 is available in a SOT223 package.
The maximum continuous collector current is 3A, and the peak collector current is 5A.
The minimum DC current gain is 85 at IC = 1A and VCE = 2V.
The typical transition frequency is 100 MHz.
The storage temperature range is -65°C to 150°C.
